Helmut Strack
76Patents
15h-index
73Co-inventors
87Inventor score
Filing activity: Dec 9, 1976 → Mar 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6184555A | Field effect-controlled semiconductor component | Electricity | 273 | Expired |
| US7538412B2 | Semiconductor device with a field stop zone | Electricity | 137 | Active |
| US6630698B1 | High-voltage semiconductor component | Electricity | 76 | Expired |
| US7879699B2 | Wafer and a method for manufacturing a wafer | Emerging Cross-Sectional Technologies | 63 | Active |
| US6852567B1 | Method of assembling a semiconductor device package | Electricity | 62 | Expired |
| US7759163B2 | Semiconductor module | Electricity | 35 | Active |
| US6504230B2 | Compensation component and method for fabricating the compensation component | Electricity | 35 | Expired |
| US6870201B1 | High voltage resistant edge structure for semiconductor components | Electricity | 35 | Expired |
| US6828609B2 | High-voltage semiconductor component | Electricity | 29 | Expired |
| US6649459B2 | Method for manufacturing a semiconductor component | Electricity | 25 | Expired |
| US4893165A | Bipolar transistor controllable by field effect | Electricity | 20 | Expired |
| US6960798B2 | High-voltage semiconductor component | Electricity | 19 | Expired |
| US7800217B2 | Power semiconductor device connected in distinct layers of plastic | Electricity | 18 | Active |
| US4612448A | Electronic switch | Electricity | 18 | Expired |
| US6441408B2 | Power semiconductor component for high reverse voltages | Electricity | 16 | Expired |
| US5087577A | Manufacturing method for a power MISFET | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5583060A | Method for manufacturing field effect controlled semiconductor components | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6819089B2 | Power factor correction circuit with high-voltage semiconductor component | Electricity | 14 | Expired |
| US7087981B2 | Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method | Electricity | 13 | Expired |
| US6825514B2 | High-voltage semiconductor component | Electricity | 11 | Expired |
| US6894329B2 | High-voltage semiconductor component | Electricity | 11 | Expired |
| US4543596A | Insulated-gate field-effect transistor (IGFET) with injector zone | Electricity | 11 | Expired |
| US4903112A | Semiconductor component with contact hole | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5311052A | Planar semiconductor component with stepped channel stopper electrode | Electricity | 8 | Expired |
| US4760432A | Thyristor having controllable emitter-base shorts | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.