Sputtering apparatus
US4547279A · kind A · utility
28Cited by
8References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1984 |
| Grant date | Oct 15, 1985 |
| Priority date | — |
| Expiry date | Nov 21, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron type sputter apparatus utilizing an orthogonal electromagnetic field, with the apparatus being adapted for forming an electrode wiring of a semiconductor device. The apparatus includes a target having a shape adapted to prevent a bumping of a target material from an end part of the target so that a temperature rise and damage of the semiconductor device attributed to electron bombardment can be prevented and the lifetime of the target can be prolonged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.