Inventor · Hachioji, JP

Mitsuaki Horiuchi

23Patents
11h-index
53Co-inventors
74Inventor score

Filing activity: Nov 21, 1984 → Mar 3, 2003

Most-cited inventions

PatentTitleAreaCited byStatus
US6737318B2 Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring Electricity 105 Expired
US5504029A Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs Electricity 79 Expired
US4853102A Sputtering process and an apparatus for carrying out the same Electricity 79 Expired
US5153685A Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring Electricity 57 Expired
US5060050A Semiconductor integrated circuit device Electricity 36 Expired
US4547279A Sputtering apparatus Electricity 28 Expired
US5202275A Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 27 Expired
US5331191A Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 22 Expired
US5930624A Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring Electricity 17 Expired
US5780882A Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 14 Expired
US4830891A Method for selective deposition of metal thin film Chemistry; Metallurgy 14 Expired
US5739589A Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same Emerging Cross-Sectional Technologies 11 Expired
US6127255A Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 7 Expired
US6169324A Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 7 Expired
US6548847B2 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM Emerging Cross-Sectional Technologies 5 Expired
US5557147A Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 5 Expired
US5753550A Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring Electricity 5 Expired
US5811316A Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring Emerging Cross-Sectional Technologies 5 Expired
US6445055B1 Semiconductor integrated circuit device and manufacturing method thereof Electricity 4 Expired
US5068710A Semiconductor device with multilayer base contact Electricity 4 Expired
US6342412B1 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 4 Expired
US6894334B2 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same Emerging Cross-Sectional Technologies 3 Expired
US6281071A Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring Electricity 2 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.