Method of making CMOS semiconductor device using specially positioned, retained masks, and product formed thereby
US4549340A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1983 |
| Grant date | Oct 29, 1985 |
| Priority date | — |
| Expiry date | Sep 8, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a semiconductor device which includes MOSFETs of the two-channel conductivity types of P- and N-channel types on a single semiconductor substrate. According to the present invention, a first mask and a second mask are used. The first mask covers that surface part of the semiconductor substrate in which the P-channel type MOSFET is to be formed, and it serves as a mask when an N-type impurity is introduced into the semiconductor substrate. The first mask has a property and etching rate different from those of a film formed by the thermal oxidation of the semiconductor substrate surface. The second mask covers that surface part of the semiconductor substrate which has been formed with the N-channel type MOSFET, and it serves as a mask when a P-type impurity is introduced into the semiconductor substrate. The second mask is used as an inter-layer insulator film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.