Shuji Ikeda
148Patents
24h-index
157Co-inventors
93Inventor score
Filing activity: Dec 1, 1977 → Jun 4, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5834851A | SRAM having load transistor formed above driver transistor | Emerging Cross-Sectional Technologies | 193 | Expired |
| US6090684A | Method for manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 156 | Expired |
| US6677649B2 | SRAM cells with two P-well structure | Emerging Cross-Sectional Technologies | 148 | Expired |
| US7067864B2 | SRAM having an improved capacitor | Electricity | 126 | Expired |
| US4768076A | Recrystallized CMOS with different crystal planes | Electricity | 111 | Expired |
| US6809399B2 | Semiconductor integrated circuit device and process for manufacturing the same | Emerging Cross-Sectional Technologies | 106 | Expired |
| US7598558B2 | Method of manufacturing semiconductor integrated circuit device having capacitor element | Emerging Cross-Sectional Technologies | 104 | Active |
| US5543652A | Semiconductor device having a two-channel MISFET arrangement defined by I-V characteristic having a negative resistance curve and SRAM cells employing the same | Emerging Cross-Sectional Technologies | 86 | Expired |
| US6569742B1 | Method of manufacturing semiconductor integrated circuit device having silicide layers | Emerging Cross-Sectional Technologies | 69 | Expired |
| US5239196A | SRAM with dual word lines overlapping drive transistor gates | Emerging Cross-Sectional Technologies | 69 | Expired |
| US6982465B2 | Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics | Electricity | 63 | Expired |
| US5444012A | Method for manufacturing semiconductor integrated circuit device having a fuse element | Emerging Cross-Sectional Technologies | 57 | Expired |
| US4890148A | Semiconductor memory cell device with thick insulative layer | Electricity | 43 | Expired |
| US5034797A | Semiconductor memory devices having stacked polycrystalline silicon transistors | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4774203A | Method for making static random-access memory device | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5005068A | Semiconductor memory device | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6686274B1 | Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process | Electricity | 35 | Expired |
| US5396100A | Semiconductor integrated circuit device having a compact arrangement of SRAM cells | Emerging Cross-Sectional Technologies | 32 | Expired |
| US4234466A | Process for preparation of solid pigment resin dispersion | Chemistry; Metallurgy | 30 | Expired |
| US4841481A | Semiconductor memory device | Emerging Cross-Sectional Technologies | 28 | Expired |
| US4828629A | Process of fabricating silicon oxide and gettering films on polycrystalline silicon resistance element | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5780910A | SRAM with stacked capacitor spaced from gate electrodes | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6031288A | Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof | Electricity | 25 | Expired |
| US4803534A | Semiconductor device sram to prevent out-diffusion | Electricity | 24 | Expired |
| US6528848B1 | Semiconductor device and a method of manufacturing the same | Electricity | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.