Method for growing monocrystalline silicon on a mask layer
US4549926A · kind A · utility
42Cited by
6References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1983 |
| Grant date | Oct 29, 1985 |
| Priority date | — |
| Expiry date | Nov 18, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/969
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.