Silicon source component for use in molecular beam epitaxial growth apparatus
US4550047A · kind A · utility
2Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1983 |
| Grant date | Oct 29, 1985 |
| Priority date | — |
| Expiry date | Jun 6, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24314
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.