Method for reducing leakage currents in semiconductor devices
US4551353A · kind A · utility
13Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1984 |
| Grant date | Nov 5, 1985 |
| Priority date | — |
| Expiry date | Jul 24, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing leakage currents in passivated semiconductor devices includes subjecting the passivation layer to a corona discharge for reducing or eliminating the inversion layer produced by the characteristic passivation layer charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.