Electrophotographic photosensitive member and process for production thereof
US4552824A · kind A · utility
9Cited by
6References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1985 |
| Grant date | Nov 12, 1985 |
| Priority date | — |
| Expiry date | Jan 28, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.