High voltage resistance element
US4553125A · kind A · utility
3Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 13, 1982 |
| Grant date | Nov 12, 1985 |
| Priority date | — |
| Expiry date | Oct 13, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/43
Abstract
A resistance element capable of withstanding a high voltage is formed through impurity diffusion in a single crystal island of a semiconductor integrated circuit substrate. The resistance element includes a resistive region formed in an exposed surface of the single crystal island and folded reciprocatively by at least one and a half turns in a planar zigzag-like pattern. The pitch at which the resistive region is folded is decreased as viewed in the direction in which extension of depletion layer formed within the single crystal island upon application of a voltage between two ends of the resistive region is decreased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.