Method for producing metal silicide-silicon heterostructures

US4554045A · kind A · utility

Assignee

• AT&T Bell Laboratories · US

Inventors

• John C. Bean · New Providence, US
• Kin-Chung Ray Chiu · Scotts Valley, US
• John M. Poate · Summit, US

Key dates

• Filing date: Nov 29, 1982
• Grant date: Nov 19, 1985
• Expiry date: Nov 29, 2002

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S117/905

Abstract

Described is a method for producing semiconductor heterostructures incorporating a metal layer. The metal layer, typically a metal-silicide, can be produced by, e.g., co-deposition or reaction with the substrate. The resulting silicide is typically epitaxial and of high crystalline perfection.