Downstream apparatus and technique
US4554047A · kind A · utility
6Cited by
3References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 12, 1984 |
| Grant date | Nov 19, 1985 |
| Priority date | — |
| Expiry date | Oct 12, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The use of a particular configuration in a downstream etching apparatus and technique allows the rapid and economical treatment of a plurality of semiconductor substrates. Additionally, through the use of this technique, global and localized loading effects are avoided. The downstream apparatus utilizes a discharge region that is relatively large compared to the volume occupied by the substrates. Additionally, the concentration of the etchant species in the effluent is maintained at a level that is of the same order as that produced in the discharge region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.