Patent · US Expired

Electron beam projection lithography

US4554458A · kind A · utility

13Cited by

2References

7Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Uwe Behringer · Herrenberg, DE
Harald Bohlen · Eppelheim, DE
Werner Kulcke · Eppelheim, DE
Peter Nehmiz · Stuttgart, DE

Key dates

Filing date	Jul 20, 1984
Grant date	Nov 19, 1985
Priority date	—
Expiry date	Jul 20, 2004

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31788
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The photoresist film 12 on the surface of a wafer 11 is exposed through the shadow pattern which is generated by a transmission mask 13 arranged a short distance therefrom when the mask is subjected to a large-area electron beam. The source of the electron beam is an unstructured photocathode 16 on an ultraviolet transparent carrier such as, quartz glass 17 which is subjected to UV radiation from the backside. The electrons exiting from layer 16 are accelerated by a homogeneous electric field 14 towards the mask 13 and shaped to form a homogeneous collimated electron beam. By means of laterally positioned electrostatic deflecting electrodes 19a, 19b, the entire electron beam can be tilted relative to the wafer for adjusting the mask pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.