Method for producing single crystal layers on insulators
US4555300A · kind A · utility
9Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1984 |
| Grant date | Nov 26, 1985 |
| Priority date | — |
| Expiry date | Feb 21, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monocrystalline layer of silicon is formed on an insulating substrate according to the present invention by use of a semi-insulating layer between the insulator and silicon film. This semi-insulating layer is composed of a mixture of silicon crystallites embedded in a silicon dioxide glass, for example. Such a technique results in a structure which is substantially free of cracking resulting from differences in thermal expansion coefficients between the insulating substrate and the monocrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.