Emil Arnold
13Patents
9h-index
13Co-inventors
69Inventor score
Filing activity: Sep 17, 1975 → Jan 22, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5261999A | Process for making strain-compensated bonded silicon-on-insulator material free of dislocations | Electricity | 65 | Expired |
| US5300448A | High voltage thin film transistor having a linear doping profile and method for making | Electricity | 42 | Expired |
| US5113236A | Integrated circuit device particularly adapted for high voltage applications | Electricity | 38 | Expired |
| US6373076B1 | Passivated silicon carbide devices with low leakage current and method of fabricating | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6310378A | High voltage thin film transistor with improved on-state characteristics and method for making same | Electricity | 33 | Expired |
| US3973146A | Signal detector comprising field effect transistors | Electricity | 33 | Expired |
| US5767547A | High voltage thin film transistor having a linear doping profile | Electricity | 29 | Expired |
| US4575923A | Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6011278A | Lateral silicon carbide semiconductor device having a drift region with a varying doping level | Electricity | 11 | Expired |
| US4555300A | Method for producing single crystal layers on insulators | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6559068B2 | Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor | Electricity | 7 | Expired |
| US6703276B2 | Passivated silicon carbide devices with low leakage current and method of fabricating | Emerging Cross-Sectional Technologies | 4 | Expired |
| US4542405A | Method and apparatus for displaying and reading out an image | Physics | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.