Method for providing substantially waste-free chemical vapor deposition of thin-film on semiconductor substrates
US4556584A · kind A · utility
16Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 3, 1984 |
| Grant date | Dec 3, 1985 |
| Priority date | — |
| Expiry date | May 3, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for providing substantially effluent-waste free vacuum chemical vapor deposition of thin-film on semiconductor substrates. A first comparatively low efficiency diffusion furnace deposits selected thin-film on the semiconductor substrates. A second comparatively high-efficiency diffusion furnace operative in response to the effluent-waste stream of the first diffusion furnace deposits substantially all of the effluent-waste on throw-away baffles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.