System for igniting and controlling a wafer processing plasma
US4557819A · kind A · utility
44Cited by
9References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1984 |
| Grant date | Dec 10, 1985 |
| Priority date | — |
| Expiry date | Jul 20, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A circuit for impedance matching an RF source to a plasma load comprises an impedance magnitude control shunted with a parallel-resonant tank circuit to provide a phase control. A DC-blocking capacitor and RF filter are used to monitor the self-bias voltage on a workpiece in the plasma. An ignition control is used to provide prompt ignition of the plasma and a rotating magnet is used to stabilize the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.