Metal-silicide deposition using plasma-enhanced chemical vapor deposition
US4557943A · kind A · utility
83Cited by
5References
4Claims
0Family size
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Key dates
| Filing date | Oct 31, 1983 |
| Grant date | Dec 10, 1985 |
| Priority date | — |
| Expiry date | Oct 31, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for deposition of thin conductive layers of low resistivity titanium silicide. The method comprises the co-deposition of titanium and silicon by plasma-enhanced chemical vapor deposition at a low temperature. An anneal above the deposition temperature reduces the layer resistivity, making the layer especially suitable for microelectronic applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.