Multiple high electron mobility transistor structures without inverted heterojunctions

US4558337A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Paul Saunier · Garland, US
• Hung-Dah Shih · Plano, US

Key dates

• Filing date: May 30, 1984
• Grant date: Dec 10, 1985
• Expiry date: May 30, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4738

Abstract

A multiple high electron mobility transistor structure without inverted heterojunctions is disclosed. Multiple normal heterojunctions of doped aluminum gallium arsenide grown on gallium arsenide without alternating inverted heterojunctions of gallium arsenide grown on doped aluminum gallium arsenide is achieved by grading undoped aluminum gallium arsenide from the doped aluminum gallium arsenide to the gallium arsenide to avoid an inverted heterojunction.