Microwave plasma etching apparatus
US4559100A · kind A · utility
32Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1984 |
| Grant date | Dec 17, 1985 |
| Priority date | — |
| Expiry date | Dec 20, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma etching apparatus comprises: a discharge tube into which a discharge gas is supplied and which forms a discharge region; means for generating a magnetic field in the discharge region; means for bringing a microwave into the discharge region; and a stage for holding a material. In the present invention, the sample exists in the discharge region. On one hand, an area of a passage for draining particles to the outside from the discharge region is 5/16 or less of an area of the discharge region. For this purpose, for example, a diameter of the sample stage is 3/4 or more of a diameter of the discharge region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.