Process for epitaxial growth on a corrugated wafer
US4561915A · kind A · utility
18Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 26, 1984 |
| Grant date | Dec 31, 1985 |
| Priority date | — |
| Expiry date | Jun 26, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for epitaxial growth which effects epitaxial growth while suppressing thermal deformation of surface corrugations of an InGaAsP/InP system semiconductor substrate. Deformation of surface corrugations is suppressed by disposing a GaAs.sub.1-z P.sub.z (0.1.ltoreq.z.ltoreq.0.8) wafer over and in close contact with the surface of the semiconductor substrate until immediately before a start of the epitaxial growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.