Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks
US4562091A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1984 |
| Grant date | Dec 31, 1985 |
| Priority date | — |
| Expiry date | Dec 18, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.