Method of manufacturing stable, low resistance contacts in integrated semiconductor circuits

US4562640A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Dietrich Widmann · Unterhaching, DE
• Reiner Sigusch · Munich, DE

Key dates

• Filing date: Mar 22, 1984
• Grant date: Jan 7, 1986
• Expiry date: Mar 22, 2004

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/019
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing stable, low resistance contacts in an integrated semiconductor circuit which involves providing highly doped impurity diffused regions in a silicon substrate, forming a silicon dioxide layer over the highly doped diffused regions and the surrounding substrate, forming contact holes of uniform size in the silicon dioxide layer in selected areas of the highly doped diffused regions, applying a layer including a metal silicide into the holes in contact with the underlying highly doped diffused regions, applying an n.sup.+ -doped polysilicon layer into the contact holes and over the silicon dioxide layer with a thickness corresponding to about half the contact hole side length, and then depositing a layer of predominantly aluminum over the n.sup.+ -doped polysilicon layer.