Method and apparatus for plasma process
US4563240A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1984 |
| Grant date | Jan 7, 1986 |
| Priority date | — |
| Expiry date | Aug 2, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method and apparatus for a plasma process in which identical samples are processed in a plasma-processing apparatus provided with a radio-frequency plasma generation means and a microwave plasma generation means, by the utilization of a radio-frequency plasma in the radio-frequency plasma generation means and a microwave plasma in the microwave plasma generation means. The plasma-processing rate can thus be increased, and also electrical damage due to ions in the plasma can be reduced, thereby ensuring a high throughput and a high quality during the manufacture of semiconductor integrated circuit elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.