Semiconductor laser device
US4563764A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1983 |
| Grant date | Jan 7, 1986 |
| Priority date | — |
| Expiry date | Sep 13, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2234
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index than those of the first semiconductor layer, the second and third semiconductor layers having conductivity types opposite to each other; characterized in that the relationship between a donor density (N.sub.D .times.10.sup.17 cm.sup.-3) of the n-conductivity type semiconductor layer in the second and third semiconductor layers and a proportion (.GAMMA..sub.n %) of an optical output existing in the n-conductivity type semiconductor layer relative to a total optical output of the laser is set at N.sub.D .times..GAMMA..sub.n .gtoreq.500. Noise characteristics are sharply improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.