Manufacture of MOSFET with metal silicide contact
US4563805A · kind A · utility
9Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1985 |
| Grant date | Jan 14, 1986 |
| Priority date | — |
| Expiry date | Jun 24, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Polysilicon elements of integrated circuits, for example gates (24) or interconnects, are provided with metallic silicide layers (26) in order to take advantage of the lower resistivity thereof. The polysilicon elements are defined on an oxide layer (23) disposed on a silicon substrate (20) before polysilicon metallization. After polysilicon metallization the metal and polysilicon are caused to interdiffuse to form silicide layers (26) covering the polysilicon elements (24).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.