Pattern forming material of a siloxane polymer
US4564579A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1984 |
| Grant date | Jan 14, 1986 |
| Priority date | — |
| Expiry date | Dec 12, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.