Akinobu Tanaka
40Patents
13h-index
41Co-inventors
81Inventor score
Filing activity: Aug 14, 1979 → Oct 25, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5612170A | Positive resist composition | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5457003A | Negative working resist material, method for the production of the same and process of forming resist patterns using the same | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5880169A | Sulfonium salts and chemically amplified positive resist compositions | Physics | 28 | Expired |
| US5389492A | Resist composition comprising a siloxane or silsesquioxane polymer having silanol groups in a composition with a naphthoquinone compound | Electricity | 24 | Expired |
| US4702990A | Photosensitive resin composition and process for forming photo-resist pattern using the same | Physics | 21 | Expired |
| US8361693B2 | Chemically amplified positive photoresist composition and pattern forming process | Physics | 21 | Active |
| US4507384A | Pattern forming material and method for forming pattern therewith | Physics | 20 | Expired |
| US5158854A | Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane | Physics | 20 | Expired |
| US5624787A | Chemically amplified positive resist composition | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5824824A | Sulfonium salts and chemically amplified positive resist compositions | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4564579A | Pattern forming material of a siloxane polymer | Physics | 16 | Expired |
| US5679496A | Chemically amplified positive resist composition | Emerging Cross-Sectional Technologies | 16 | Expired |
| US4238385A | Coating composition for forming insulating film on electroconductive substrate for printed circuits and method therefor | Electricity | 14 | Expired |
| US5290899A | Photosensitive material having a silicon-containing polymer | Physics | 11 | Expired |
| US8470511B2 | Chemically amplified negative resist composition for EB or EUV lithography and patterning process | Physics | 11 | Active |
| US5629134A | Chemically amplified positive resist composition | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5512417A | Positive resist composition comprising a bis (t-butoxycarbonylmethly(thymolphthalein as a dissolution inhibitor | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5057396A | Photosensitive material having a silicon-containing polymer | Chemistry; Metallurgy | 9 | Expired |
| US8288076B2 | Chemically amplified resist composition and pattern forming process | Physics | 9 | Active |
| US9075306B2 | Chemically amplified negative resist composition and patterning process | Physics | 9 | Active |
| US8168367B2 | Resist composition and patterning process | Emerging Cross-Sectional Technologies | 9 | Active |
| US8426108B2 | Chemically amplified positive resist composition for EB or EUV lithography and patterning process | Emerging Cross-Sectional Technologies | 8 | Active |
| US8470512B2 | Polymer, chemically amplified negative resist composition, and patterning process | Physics | 8 | Active |
| US5856561A | Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions | Chemistry; Metallurgy | 7 | Expired |
| US5356753A | Positive resist material | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.