Method of producing single crystal film utilizing a two-step heat treatment
US4565584A · kind A · utility
58Cited by
10References
8Claims
0Family size
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Key dates
| Filing date | Jan 25, 1983 |
| Grant date | Jan 21, 1986 |
| Priority date | — |
| Expiry date | Jan 25, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.