Ethylene glycol etch for processes using metal silicides
US4569722A · kind A · utility
20Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1984 |
| Grant date | Feb 11, 1986 |
| Priority date | — |
| Expiry date | Nov 23, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel etchant which comprises a mixture of ethylene glycol and hydrofluoric acid, preferably buffered hydrofluoric acid, has been found to control the etch rate of refractory metal silicides, in particular titanium silicide, in a manner such that titanium silicide may be used in place of tantalum silicide for interconnects and gates in semiconductor integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.