Method and apparatus for reactive vapor deposition of compounds of metal and semi-conductors
US4572842A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1984 |
| Grant date | Feb 25, 1986 |
| Priority date | — |
| Expiry date | Aug 24, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0068
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Method for reactive vapor deposition of compounds of metals and semi-conductors on at least one substrate by glow discharge. Into a space between a magnetron cathode (1) with a target (5) and the substrate (11) an inert gas and a reaction gas for the formation of the desired compound with the target material are separately introduced. Two solve the problem of making it possible to maintain the vapor deposition process stable over long time periods, according to the invention, a flow restriction is introduced between the target (5) and the substrate (11) by a diaphragm (20), which amounts to at least 40% of the cross-section of the space. Further, the inert gas is fed between target (5) and aperture (20) at the periphery of the target. Moreover the reaction gas is fed to the mass flow through a distributor device (21) to one side of the diaphragm (20), and finally a glow discharge is also maintained in the region between diaphragm (20) and substrate (11) by means of an anode (25) exposed to the reaction gas arranged on the other side of the aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.