Plasma etch method for TiO.sub.2
US4574177A · kind A · utility
4Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 13, 1984 |
| Grant date | Mar 4, 1986 |
| Priority date | — |
| Expiry date | Nov 13, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for plasma etching of TiO.sub.2, using a mixture of oxygen and a fluorine-bearing species, preferably CF.sub.4. This mixture gives good selectivity over aluminum and photoresist, and approximately unity selectivity over silica or silicon nitride. Use of a chlorine-containing species is also taught by the invention, and will provide different selectivities. The present invention is also useful for etching in the RIE mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.