Double channel planar buried heterostructure laser with periodic structure formed in guide layer
US4575851A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1982 |
| Grant date | Mar 11, 1986 |
| Priority date | — |
| Expiry date | Dec 7, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double heterostructure semiconductor laser device has a first wide bandgap layer, forming an optical guide layer, a portion of which is provided with periodic corrugations to form a distributed Bragg reflector. The optical guide layer extends along a major surface of the substrate in the direction of laser propagation. A narrow bandgap active region over which is disposed a second wide bandgap region, forming a first cladding layer, are both disposed over a portion of the optical guide layer in the direction of laser propagation to produce an amplifier section. The remaining portion of the optical guide layer in the direction of laser propagation is disposed over that portion of the substrate containing the distributed Bragg reflector to thereby form a reflector section. First and second channels are formed in said device in the direction of laser propagation to produce a mesa, with additional cladding layers, forming current blocking layers, being disposed in said channels but not over the mesa, to electrically isolate said mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.