Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
US4575923A · kind A · utility
18Cited by
7References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 6, 1983 |
| Grant date | Mar 18, 1986 |
| Priority date | — |
| Expiry date | Apr 6, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
Abstract
The present invention provides a high resistance film with a low temperature coefficient of resistance. Such films can be used as resistors in integrated and hybrid circuits, as well as resistive layers in passivating circuits for high-voltage devices. In the latter circuits, the passivating layers shield the device from the detrimental influence of external or internal electric fields. The ability to obtain a low temperature coefficient of resistance enables obtaining a high sheet resistance without being influenced by changing temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.