Method for growing monocrystalline silicon through mask layer
US4578142A · kind A · utility
69Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1984 |
| Grant date | Mar 25, 1986 |
| Priority date | — |
| Expiry date | May 10, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.