Plasma etching method
US4578559A · kind A · utility
13Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1984 |
| Grant date | Mar 25, 1986 |
| Priority date | — |
| Expiry date | Sep 10, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.