Plasma reactor apparatus
US4579618A · kind A · utility
402Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1984 |
| Grant date | Apr 1, 1986 |
| Priority date | — |
| Expiry date | Oct 29, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma processing is accomplished with an improved single electrode reactor apparatus. High and low frequency power supplies are coupled to the single electrode to provide increased process flexibility, control and residue removal. A multi-stage passive filter network is disclosed which performs the functions of coupling both power supplies to the electrode, isolating the low frequency power supply from the high frequency power supply and attenuating the undesired frequencies produced by mixing of the two frequencies in the non-linear load represented by the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.