Deep depletion CCD imager

US4580155A · kind A · utility

Assignee

• Nortel Networks Limited · CA

Inventors

• Hak-Yam Tsoi · Scottsdale, US
• Joseph P. Ellul · Ottawa, CA

Key dates

• Filing date: Dec 21, 1982
• Grant date: Apr 1, 1986
• Expiry date: Dec 21, 2002

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/157

Abstract

An integrated circuit device has a high resistivity silicon substrate in which a low resistivity region exists. A charge coupled array is fabricated in the high resistivity region and an output circuit is fabricated in the low resistivity region. At the boundary between the high and low resistivity regions a floating diffusion provides charge coupling between the array and the circuit. The low resistivity region is prepared in a high resistivity substrate at a temperature in excess of 1000.degree. C. to obtain a sufficiently deep low resistivity region but subsequent processing to produce the charge coupled array and the control circuit is performed at lower temperatures to minimize thermal degradation and contamination of the high resistivity region.