Joseph P. Ellul
30Patents
14h-index
33Co-inventors
81Inventor score
Filing activity: Dec 21, 1982 → Nov 23, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5362669A | Method of making integrated circuits | Emerging Cross-Sectional Technologies | 107 | Expired |
| US4996081A | Method of forming multiple nitride coating on silicon | Electricity | 73 | Expired |
| US5352923A | Trench resistors for integrated circuits | Emerging Cross-Sectional Technologies | 51 | Expired |
| US5296258A | Method of forming silicon carbide | Chemistry; Metallurgy | 48 | Expired |
| US5316978A | Forming resistors for intergrated circuits | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5394000A | Trench capacitor structure | Electricity | 45 | Expired |
| US5516710A | Method of forming a transistor | Electricity | 44 | Expired |
| US5275974A | Method of forming electrodes for trench capacitors | Electricity | 40 | Expired |
| US6079353A | Chamber for reducing contamination during chemical vapor deposition | Chemistry; Metallurgy | 32 | Expired |
| US5614750A | Buried layer contact for an integrated circuit structure | Electricity | 31 | Expired |
| US6114227A | Chamber for reducing contamination during chemical vapor deposition | Chemistry; Metallurgy | 23 | Expired |
| US5773871A | Integrated circuit structure and method of fabrication thereof | Electricity | 23 | Expired |
| US5726084A | Method for forming integrated circuit structure | Electricity | 19 | Expired |
| US4580155A | Deep depletion CCD imager | Electricity | 15 | Expired |
| US4968641A | Method for formation of an isolating oxide layer | Emerging Cross-Sectional Technologies | 11 | Expired |
| US4934774A | Optical waveguide and method for its manufacture | Physics | 11 | Expired |
| US5035916A | Optical waveguide and method for its manufacture | Physics | 10 | Expired |
| US7943473B2 | Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme | Electricity | 10 | Active |
| US9608130B2 | Semiconductor device having trench capacitor structure integrated therein | Electricity | 10 | Active |
| US4836902A | Method and apparatus for removing coating from substrate | Electricity | 10 | Expired |
| US6475873B1 | Method of forming laser trimmable thin-film resistors in a fully planarized integrated circuit technology | Electricity | 9 | Expired |
| US4859303A | Method and apparatus for removing coating from substrate | Electricity | 7 | Expired |
| US9196672B2 | Semiconductor device having capacitor integrated therein | Electricity | 7 | Active |
| US8686543B2 | 3D chip package with shielded structures | Electricity | 4 | Active |
| US8344478B2 | Inductors having inductor axis parallel to substrate surface | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.