Mixed excitation plasma etching system
US4581100A · kind A · utility
32Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1984 |
| Grant date | Apr 8, 1986 |
| Priority date | — |
| Expiry date | Oct 29, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It has been discovered surprisingly that when a plasma is produced by exciting a gas or mixture of gases with microwaves and simultaneously also with a radio frequency electrical discharge, that the resulting plasma is much more highly chemically reactive than a plasma produced instead by only one of the excitations. Such a plasma etches a surface much faster than the sum of the etch rates produced by each of the excitations individually and the etching anisotropy may be controlled by varying the ratio of the applied power of each of the two kinds of simultaneous excitation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.