Dry-etching process
US4581101A · kind A · utility
49Cited by
3References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 4, 1984 |
| Grant date | Apr 8, 1986 |
| Priority date | — |
| Expiry date | Oct 4, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry-etching process comprising dry-etching treatment of semiconductor material by action of a gas and, if necessary, cleaning treatment, characterized in that at least one of the dry-etching and cleaning treatments is conducted under action of a gas composed essentially of a fluorinated ether.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.