Thyristor cathode and transistor emitter structures with insulator islands
US4581626A · kind A · utility
9Cited by
4References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1979 |
| Grant date | Apr 8, 1986 |
| Priority date | — |
| Expiry date | Apr 9, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/233
Abstract
A gate turn-off (IGTO) thyristor having short turn-off times and high di/dt and dV/dt capabilities comprises an insulating layer overlying the inner region of the n2-emitter (cathode) region which includes a central region of greater resistivity than the n2-emitter cathode region for reducing turn-off current density of the device. The addition of an insulating layer and a central region of increased resistivity to the central portions of a base region of a bipolar transistor provides similar improved performance characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.