Method of making thin free standing single crystal films
US4582559A · kind A · utility
26Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1984 |
| Grant date | Apr 15, 1986 |
| Priority date | — |
| Expiry date | Apr 27, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.