Method for making seed crystals for single-crystal semiconductor devices
US4585512A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1984 |
| Grant date | Apr 29, 1986 |
| Priority date | — |
| Expiry date | Jan 27, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.