Setsuo Usui
46Patents
18h-index
28Co-inventors
81Inventor score
Filing activity: Jan 27, 1984 → Apr 21, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5145808A | Method of crystallizing a semiconductor thin film | Emerging Cross-Sectional Technologies | 218 | Expired |
| US5304250A | Plasma system comprising hollow mesh plate electrode | Electricity | 172 | Expired |
| US5858862A | Process for producing quantum fine wire | Chemistry; Metallurgy | 131 | Expired |
| US5976957A | Method of making silicon quantum wires on a substrate | Emerging Cross-Sectional Technologies | 84 | Expired |
| US6953754B2 | Functional device and method of manufacturing the same | Electricity | 78 | Expired |
| US6548830B1 | Semiconductor device formed of single crystal grains in a grid pattern | Emerging Cross-Sectional Technologies | 71 | Expired |
| US5953595A | Method of manufacturing thin film transistor | Emerging Cross-Sectional Technologies | 61 | Expired |
| US6130142A | Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate | Emerging Cross-Sectional Technologies | 58 | Expired |
| US6130143A | Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate | Emerging Cross-Sectional Technologies | 54 | Expired |
| US6285055A | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device | Electricity | 43 | Expired |
| US6190949A | Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6746942B2 | SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM, AND METHOD OF FABRICATING SINGLE CRYSTAL THIN FILM, SINGLE CRYSTAL THIN FILM SUBSTRATE, AND SEMICONDUCTOR DEVICE | Electricity | 35 | Expired |
| US5591653A | Method of manufacturing Si-Ge thin film transistor | Emerging Cross-Sectional Technologies | 31 | Expired |
| US5637180A | Plasma processing method and plasma generator | Chemistry; Metallurgy | 24 | Expired |
| US5728610A | Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics | Electricity | 24 | Expired |
| US5567633A | Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics | Electricity | 21 | Expired |
| US5437734A | Solar cell | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5910015A | Thin film transistor and manufacturing method of the thin film transistor | Electricity | 20 | Expired |
| US6376290B1 | Method of forming a semiconductor thin film on a plastic substrate | Electricity | 15 | Expired |
| US6093586A | Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5446304A | Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate | Electricity | 13 | Expired |
| US4564403A | Single-crystal semiconductor devices and method for making them | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5726487A | Semiconductor device having an improved thin film transistor | Electricity | 12 | Expired |
| US5409857A | Process for production of an integrated circuit | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6410412B1 | Methods for fabricating memory devices | Emerging Cross-Sectional Technologies | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.