Plasma anodization system
US4585541A · kind A · utility
18Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1984 |
| Grant date | Apr 29, 1986 |
| Priority date | — |
| Expiry date | Nov 8, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A cusp field is applied between a plasma source of a vacuum chamber of a plasma anodization system and a substance such as a semiconductor substrate or a metal plate to be oxidized so that the substance may not be adversely affected by the plasma. The temperature control can be conducted independently of the plasma generating condition because the substance to be treated is not adversely affected by the plasma in a direct manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.