Shinichiro Kimura
78Patents
21h-index
106Co-inventors
91Inventor score
Filing activity: Jun 16, 1983 → Mar 11, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5355330A | Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode | Electricity | 111 | Expired |
| US4742018A | Process for producing memory cell having stacked capacitor | Emerging Cross-Sectional Technologies | 109 | Expired |
| US5466621A | Method of manufacturing a semiconductor device having silicon islands | Emerging Cross-Sectional Technologies | 101 | Expired |
| US4670768A | Complementary MOS integrated circuits having vertical channel FETs | Electricity | 83 | Expired |
| US5346834A | Method for manufacturing a semiconductor device and a semiconductor memory device | Emerging Cross-Sectional Technologies | 79 | Expired |
| US4970564A | Semiconductor memory device having stacked capacitor cells | Electricity | 76 | Expired |
| US6130449A | Semiconductor memory device and a method for fabricating the same | Electricity | 70 | Expired |
| US5115289A | Semiconductor device and semiconductor memory device | Electricity | 56 | Expired |
| US5140389A | Semiconductor memory device having stacked capacitor cells | Electricity | 56 | Expired |
| US5091761A | Semiconductor device having an arrangement of IGFETs and capacitors stacked thereover | Electricity | 56 | Expired |
| US6335893B1 | Semiconductor integrated circuit device | Electricity | 55 | Expired |
| US7504689B2 | Semiconductor device and manufacturing method of semiconductor device | Electricity | 51 | Expired |
| US7235441B2 | Nonvolatile semiconductor memory device with tapered sidewall gate and method of manufacturing the same | Electricity | 51 | Expired |
| US4937641A | Semiconductor memory and method of producing the same | Electricity | 46 | Expired |
| US6770535B2 | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 46 | Expired |
| US4918502A | Semiconductor memory having trench capacitor formed with sheath electrode | Electricity | 45 | Expired |
| US6535435B2 | Reference voltage generator permitting stable operation | Electricity | 44 | Expired |
| US5658811A | Method of manufacturing a semiconductor device | Electricity | 38 | Expired |
| US4873560A | Dynamic random access memory having buried word lines | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5357464A | Semiconductor memory having writing and reading transistors, method of fabrication thereof, and method of use thereof | Electricity | 30 | Expired |
| US5270232A | Process for fabricating field effect transistor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6376304B1 | Semiconductor memory device and a method for fabricating the same | Electricity | 20 | Expired |
| US5200635A | Semiconductor device having a low-resistivity planar wiring structure | Electricity | 18 | Expired |
| US4585541A | Plasma anodization system | Electricity | 18 | Expired |
| US8030668B2 | Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC | Electricity | 18 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.