Polyamic acid copolymer system for improved semiconductor manufacturing
US4590258A · kind A · utility
16Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1983 |
| Grant date | May 20, 1986 |
| Priority date | — |
| Expiry date | Dec 30, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polyamic acid copolymer forming a polyimide comprising, in mole percent, from greater than 5 percent to about 45 percent pyromellitic dianhydride, from about 5 percent to about 45 percent oxydiphthalic dianhydride, and about 50 percent of oxydianiline. Polyimides formed by curing the copolymer are also disclosed as is a process for forming a heat sealable coating on or dielectric isolation layer within electronic circuitry using the copolymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.