Chromium-silicon-nitrogen thin film resistor and apparatus
US4591821A · kind A · utility
22Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1984 |
| Grant date | May 27, 1986 |
| Priority date | — |
| Expiry date | Nov 19, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/006
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.