Glass bonding method
US4592794A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1985 |
| Grant date | Jun 3, 1986 |
| Priority date | — |
| Expiry date | Jan 29, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO.sub.2, 0-2.3% SiO.sub.2, 58.6-78.5% PbO, 0-5.3% PbF.sub.2, 7-13% B.sub.2 O.sub.3, 2.5-6.9% Al.sub.2 O.sub.3, 0-5.3% ZnO, 0.4-2.3% V.sub.2 O.sub.5, 0-5.3% CdO, and 6.2-9.6% TiO.sub.2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO.sub.2, 45-55% PbO, 8-12% ZnO, 2-5% Al.sub.2 O.sub.3, and 25-30% B.sub.2 O.sub.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.